ELECTRICAL PROPERTIES OF CuXZn1-XS NANOCOMPOSITE THIN FILM

Abstract

Thin dielectric films are widely studied because of their applications in the field of micro- electronics. The basic and applied solid state research have resulted in the production of dielectric thin film components which are extensively used as computer memory, inductance coupling elements, in parametric circuits, wave isolators, in solar cells etc. The dielectric constant εr and loss factor tan δ are not absolute constants for an actual dielectric. Both these constants depends on many factors namely the temperature, the frequency, the magnitude of the alternating voltage, the humidity of air etc. The frequency dependence of tan δ in thin film is a very important factor. In these view, in the present study CuxZn1-xS Nanocomposite thin films were prepared for various values of x, viz. 0, 0.2, 0.4, 0.6, 0.8 and 1 by SILAR method. The Capacitance and loss factor of all the films were measured using the instrument LCRZ Digital meter of model TH2816A TONGHUI for various temperatures ranging from 40 -120˚C in the steps of 10˚C at different fixed frequencies viz. 1, 2, 5, and 10 kHz. Loss factor, Dielectric constant and A.C Conductivity were determined from the available methods. The variation of loss factor and dielectric constant with temperature and frequency were also studied. They show normal dependence with temperature and frequency. The search for new materials with low dielectric constant in the microelectronics industry has and will continue feverishly into the future as the demand of faster processing speeds increases. In the present study, the prepared films have low dielectric constant values so, it can be concluded that dielectric layers are used for the fabrication of both thin film capacitors and resistors.